| PART |
Description |
Maker |
| TIM1414-10LA-252 |
HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz
|
Toshiba Semiconductor
|
| TIM6472-6UL |
HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| AWT6106 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc.
|
| AWT613608 AWT6136RM5P8 AWT6136RM5P9 |
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS, Inc
|
| AWT6252M7P8 AWT6252 |
IMT/WCDMA 3.4V/27.5dBm Linear Power Amplifier Module 膜厚 WCDMA.4V/27.5dBm线性功率放大器模块
The AWT6252 meets the increasing demands for higher output power in 3GPP 1XRTT handsets.
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| TIM5964-60SL08 |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| RT9801APE RT9801BPE RT9801AGE RT9711CPB RT9711CPBG |
80mΩ, 1.5A/0.6A High-Side Power Switches with Flag
80m惟, 1.5A/0.6A High-Side Power Switches with Flag
80m楼?, 1.5A/0.6A High-Side Power Switches with Flag
80mヘ, 1.5A/0.6A High-Side Power Switches with Flag
User Programmable Micro-Power Voltage Detectors
|
Richtek Technology Corporation
|
| MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module
1600V high power thyristor module
1400V high power thyristor module
1200V high power thyristor module
High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CCF-2 |
Industrial Power, Flameproof (High Temperature Coating Meets EIA RS-325-A Spec), Small Size, High Power Rating, Excellent High Frequency Characteristics, Low Noise, Low Voltage Coefficient, Tape and Reel Packaging
|
Vishay
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
